Ukwenziwa kwamaqhekeza e-SiC arhabaxa, aphakathi, kunye nacolekileyo kufuneka abe yi-5:1:4. I-Black SiC ikhethwa ngokubanzi njengesixhobo sokwenza izitena ze-silicon carbide; ukubunjwa kwayo imichiza ngolu hlobo lulandelayo: SiC 98.0%, free C 0.5%, Fe 0.2%, kwaye free SiO₂ 0.6%. Iinkqubo zokuvelisa ziyahluka ngokuxhomekeke kwindlela yokudibanisa. Inkcazo emfutshane yeenkqubo zeendlela ezahlukeneyo zokudibanisa zimi ngolu hlobo lulandelayo:
(1) I-Silicon nitride -izitena ezibotshelelweyo ze-silicon carbide: Imizimba eluhlaza eyenziwe ngamasuntswana arhabaxa, aphakathi, kunye namasuntswana e-SiC acolekileyo kunye nomgubo wesilicon ocolekileyo utshiswa kumoya ococekileyo we-N₂ kwi-1370 degree. Oku kuvelisa isitena esine -SiC skeleton kunye ne - kunye -neSi₃N₄ matrix. Izixa ezincinci ze-silicon ezishiyekileyo kunye ne-SiO₂ zihlala kwi-matrix; umxholo ozalanayo wala macandelo uyahluka ngokomenzi.
(2) Izitena ze-silicon carbide: I-SiC, i-silicon powder, kunye ne-carbon powder zixutywe kwaye zibunjwe ngokomlinganiselo othile, emva koko zitshiswe kwi-1400℃kwindawo yokunciphisa. Kwiimeko ezininzi, ukudubula kuqhutyelwa ngezitena ezingcwatywe kwikhabhoni. Ngexesha lokudubula, isitena esine- -SiC skeleton kunye ne-{5}} grained - iSiC matrix iyaveliswa. I- - i-SiC yenziwe ngokusabela kwe-silicon powder ecocekileyo kunye ne-carbon powder ngexesha lokudubula; le mveliso ikwaqulethe ixabiso elincinci le-silicon eseleyo kunye nekhabhoni.
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