Izitena ze-silicon ze-carbide zine-thermal conductivity emalunga ne-120–170 W/(m·K), ixabiso elidlula lee lelo lezinto ezininzi zesinyithi kunye{2}}ezingezontsimbi. Oku kuqhuba kwe-thermal kuphezulu kubangelwa ngokukodwa kwi-crystal structure ye-silicon carbide, eququzelela ukwanda kobushushu ngokukhawuleza nge-crystal lattice.
Isishwankathelo se-Thermal Conductivity kwizitena zeSilicon Carbide
Njengophezulu-ukusebenza kwemathiriyeli yeceramic, ukuhanjiswa kwe-thermal yezitena ze-silicon carbide luphawu oluphambili lobushushu bazo{1}}nokuhambisa. I-conductivity ephezulu ye-thermal ibonisa umthamo omkhulu wokudluliselwa kobushushu. Izitena zeSilicon carbide zibonisa amaxabiso e-thermal conductivity aphezulu kakhulu kunalawo ezinto zemveli ezilahlayo kunye ne-abrasives (ezifana ne-corundum), ezikhokelela kubushushu obugqwesileyo{4}}kumsebenzi wokudluliselwa kwindawo{5}}zobushushu obuphezulu.
Izinto ezichaphazela i-Thermal Conductivity
- Ubushushu: I-thermal conductivity yezitena ze-silicon carbide yonyuka ngokunyuka kwamaqondo obushushu. Ngelixa imathiriyeli ibonisa i-thermal conductivity echukumisayo kwiqondo lobushushu begumbi, ukusebenza kwayo kukhetheke ngakumbi kwindawo-zobushushu obuphezulu.
- Ubume beCrystal: Iikristale ze-silicon ze-carbide zenziwe nge-carbon kunye nee-athom zesilicon ezicwangciswe ngendlela eyodwa{0}}yemitha yetyhubhiki enemigangatho emithathu eyodwa. Esi sakhiwo sibonisa ilungiselelo le-athomu elicwangcisiweyo kakhulu, eliphucula ukusebenza kakuhle kokuqhuba ubushushu. Ukongeza, isilicon carbide ikhona kwiifom ezimbini zecrystalline{3}}SiC kunye -neSiC{5} kunye -neSiC ebonisa ukuhanjiswa kwe-thermal ephezulu kune -SiC.
- Ubunyulu beCrystal:-izitena ezicocekileyo ze-silicon carbide zibonisa ukuhanjiswa kwe-thermal ephezulu. Ubukho bobumdaka buguqula ubume be-elektroniki ngaphakathi kweekristale ze-silicon carbide, ngaloo ndlela kunciphisa ukuhanjiswa kwe-thermal. Ngenxa yoko, ukunyusa ukucoceka kwezitena ngexesha lemveliso kubalulekile ekuphuculeni umgangatho wabo we-thermal conductivity.
- Iindlela zokuqhuba ubushushu: Ukuqhuba kobushushu ngaphakathi kwezitena ze-silicon carbide kwenzeka ngokuyintloko nge-lattice conduction kunye ne-electronic conduction. I-Lattice conduction idlala indima ephambili, kunye ne-phonon vibration esebenza njengeyona ndlela iphambili yokuhambisa ubushushu.
IiNdawo zokuSebenza
Ngenxa yeepropathi zazo ezigqwesileyo{0}}kuquka ukuguquguquka okuphezulu kwe-thermal, i-coefficient ephantsi yokwandiswa kwe-thermal, kunye nozinzo oluphezulu lwe-thermal{1}}izitena ze-silicon carbide zisetyenziswa kakhulu kwiindawo ezifana{2}}nobushushu obuphezulu be-electronics, i-optoelectronics, imboni yekhemikhali, kunye nobuchwepheshe be-rocket injini. Umzekelo, kwibala lobushushu obuphezulu{4}}izitena ze-silicon carbide zisebenza njengezinto zokuphelisa ubushushu kwizixhobo zamandla, ziqinisekisa ukusebenza kwazo ngokufanelekileyo kwindawo{5}}zobushushu obuphezulu; kwi-optoelectronics, zisetyenziswa njengemathiriyeli yolawulo lwe-thermal -yelaser zamandla aphezulu, ngaloo ndlela ziphucula ukusebenza kakuhle kunye nokwandisa ubomi benkonzo.